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DIM600DDS12-A000

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The DIM600DDS12-A000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2.2 to 3.2 V, DC Collector Current 600 A, Peak Collector Current 1200 A, DC Forward Current 600 A. More details for DIM600DDS12-A000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM600DDS12-A000
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V ,Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    2.2 to 3.2 V
  • DC Collector Current
    600 A
  • Peak Collector Current
    1200 A
  • DC Forward Current
    600 A
  • Gate Emitter Leakage Current
    3 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    5208 W
  • Package Type
    Chassis Mount
  • Applications
    High Reliability Inverters, Motor Controllers

Technical Documents
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