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DIM800DDM12-A000

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The DIM800DDM12-A000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2.2 V, DC Collector Current 800 A, Peak Collector Current 1600 A, DC Forward Current 800 A. More details for DIM800DDM12-A000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM800DDM12-A000
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • Dimensions
    140 x 130 mm
  • Saturated Collector Emitter Voltage
    2.2 V
  • DC Collector Current
    800 A
  • Peak Collector Current
    1600 A
  • DC Forward Current
    800 A
  • Gate Emitter Leakage Current
    4 µA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    6940 W
  • Package
    D
  • Package Type
    Module
  • Applications
    Motor controllers, inverters, traction drives
  • Surge Current
    4500 A

Technical Documents
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