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12MBI100VN-120-50

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The 12MBI100VN-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 3.05 V, DC Collector Current 100 to 200 A, DC Forward Current 100 to 200 A, Junction Temperature 150 Degree C. More details for 12MBI100VN-120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    12MBI100VN-120-50
  • Manufacturer
    Fuji Electric
  • Description
    600 V, IGBT Module

General

  • No. of Transistors
    Twelve
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 3.05 V
  • DC Collector Current
    100 to 200 A
  • DC Forward Current
    100 to 200 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    430 W
  • Package
    M1203
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, Uniterruptible power supply, Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
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