The 12MBI100VN-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 3.05 V, DC Collector Current 100 to 200 A, DC Forward Current 100 to 200 A, Junction Temperature 150 Degree C. More details for 12MBI100VN-120-50 can be seen below.