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12MBI50VN-120-50

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12MBI50VN-120-50 Image

The 12MBI50VN-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.75 V, DC Collector Current 50 to 100 A, DC Forward Current 50 to 100 A, Junction Temperature 150 Degree C. More details for 12MBI50VN-120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    12MBI50VN-120-50
  • Manufacturer
    Fuji Electric
  • Description
    600 V, IGBT Module

General

  • No. of Transistors
    Twelve
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.75 V
  • DC Collector Current
    50 to 100 A
  • DC Forward Current
    50 to 100 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    235 W
  • Package
    M1203
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, Uniterruptible power supply, Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
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