The 12MBI50VN-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.75 V, DC Collector Current 50 to 100 A, DC Forward Current 50 to 100 A, Junction Temperature 150 Degree C. More details for 12MBI50VN-120-50 can be seen below.