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1MBI1000UG-330

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The 1MBI1000UG-330 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.46 to 3.56 V, DC Collector Current 1000 to 2000 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 3.2 uA. More details for 1MBI1000UG-330 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI1000UG-330
  • Manufacturer
    Fuji Electric
  • Description
    3300 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.46 to 3.56 V
  • DC Collector Current
    1000 to 2000 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    3.2 uA
  • Collector Emitter Voltage
    3300 V
  • Power Dissipation
    10400 W
  • Package
    M155
  • Package Type
    Module
  • Applications
    Traction drives, Industrial moter drives, Wind power, Chopper
  • RoHS Compliant
    Yes

Technical Documents
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