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1MBI100U4F-120L-50

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1MBI100U4F-120L-50 Image

The 1MBI100U4F-120L-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.25 V, DC Collector Current 150 to 300 A, DC Forward Current 150 to 300 A, Junction Temperature 150 Degree C. More details for 1MBI100U4F-120L-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI100U4F-120L-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.25 V
  • DC Collector Current
    150 to 300 A
  • DC Forward Current
    150 to 300 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    540 W
  • Package
    M262
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, AC and DC servo drives, Uniterruptible power supply systems, Industrial machines, Welding machines
  • RoHS Compliant
    Yes

Technical Documents
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