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1MBI1200UE-330

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1MBI1200UE-330 Image

The 1MBI1200UE-330 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.28 to 3.45 V, DC Collector Current 2000 to 4000 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 4.8 uA. More details for 1MBI1200UE-330 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI1200UE-330
  • Manufacturer
    Fuji Electric
  • Description
    3300 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.28 to 3.45 V
  • DC Collector Current
    2000 to 4000 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    4.8 uA
  • Collector Emitter Voltage
    3300 V
  • Power Dissipation
    14700 w
  • Package
    M156
  • Package Type
    Module
  • Applications
    Traction drives, Industrial moter drives, Wind power, Chopper
  • RoHS Compliant
    Yes

Technical Documents
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