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1MBI200HH-120L-50

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1MBI200HH-120L-50 Image

The 1MBI200HH-120L-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.1 to 4.15 V, DC Collector Current 300 to 600 A, DC Forward Current 200 to 400 A, Junction Temperature 150 Degree C. More details for 1MBI200HH-120L-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI200HH-120L-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.1 to 4.15 V
  • DC Collector Current
    300 to 600 A
  • DC Forward Current
    200 to 400 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1390 W
  • Package
    M249
  • Package Type
    Module
  • Applications
    NPC-3 level Inverter, Active PFC, Inverter DB for moter drives, AC DC servo drives Amplifier, Industrial drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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