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1MBI200U4H-120L-50

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1MBI200U4H-120L-50 Image

The 1MBI200U4H-120L-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.25 V, DC Collector Current 200 to 600 A, DC Forward Current 300 to 600 A, Junction Temperature 150 Degree C. More details for 1MBI200U4H-120L-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI200U4H-120L-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.25 V
  • DC Collector Current
    200 to 600 A
  • DC Forward Current
    300 to 600 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1040 W
  • Package
    M259
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, AC and DC servo drives, Uniterruptible power supply systems, Industrial machines, Welding machines
  • RoHS Compliant
    Yes

Technical Documents
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