1MBI400HH-120L-50

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1MBI400HH-120L-50 Image

The 1MBI400HH-120L-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.1 to 4.3 V, DC Collector Current 600 to 1200 A, DC Forward Current 400 to 800 A, Junction Temperature 150 Degree C. More details for 1MBI400HH-120L-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI400HH-120L-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.1 to 4.3 V
  • DC Collector Current
    600 to 1200 A
  • DC Forward Current
    400 to 800 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.8 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    2500 W
  • Package
    M249
  • Package Type
    Module
  • Applications
    NPC-3 level Inverter, Active PFC, Inverter DB for moter drives, AC DC servo drives Amplifier, Industrial drives
  • RoHS Compliant
    Yes

Technical Documents

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