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1MBI650VXA-170EH-54

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1MBI650VXA-170EH-54 Image

The 1MBI650VXA-170EH-54 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.55 V, DC Collector Current 650 to 1300 A, DC Forward Current 650 to 1300 A, Junction Temperature 175 Degree C. More details for 1MBI650VXA-170EH-54 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI650VXA-170EH-54
  • Manufacturer
    Fuji Electric
  • Description
    1700 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.55 V
  • DC Collector Current
    650 to 1300 A
  • DC Forward Current
    650 to 1300 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.8 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    4150 W
  • Package
    M271
  • Package Type
    Module
  • Applications
    NPC-3 level Inverter, Active PFC, Industrial machines
  • RoHS Compliant
    Yes

Technical Documents
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