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1MBI900VXA-120PD-50

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1MBI900VXA-120PD-50 Image

The 1MBI900VXA-120PD-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 2.2 V, DC Collector Current 900 to 1800 A, DC Forward Current 900 to 1800 A, Junction Temperature 175 Degree C. More details for 1MBI900VXA-120PD-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1MBI900VXA-120PD-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.2 V
  • DC Collector Current
    900 to 1800 A
  • DC Forward Current
    900 to 1800 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    1.6 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    5100 W
  • Package
    M271
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, AC and DC servo drives, Uniterruptible power supply systems, Industrial machines, Welding machines
  • RoHS Compliant
    Yes

Technical Documents
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