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2MBI1000XRNF120-50

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The 2MBI1000XRNF120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.6 to 3.35 V, DC Collector Current 1000 A, Peak Collector Current 2000 A, DC Forward Current 1000 A. More details for 2MBI1000XRNF120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2MBI1000XRNF120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.6 to 3.35 V
  • DC Collector Current
    1000 A
  • Peak Collector Current
    2000 A
  • DC Forward Current
    1000 A
  • Peak Forward Current
    2000 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    8330 W
  • Package
    M286
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, AC and DC servo drives, Uniterruptible power supply systems, Wind turbines, PV power conditioning, Systems
  • RoHS Compliant
    Yes

Technical Documents
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