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2MBI100HB-120-50

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The 2MBI100HB-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.1 to 4.2 V, DC Collector Current 150 to 300 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.2 uA. More details for 2MBI100HB-120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2MBI100HB-120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.1 to 4.2 V
  • DC Collector Current
    150 to 300 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1040 W
  • Package
    M233
  • Package Type
    Module
  • Applications
    Soft switch application, Industrial machines, welding machines
  • RoHS Compliant
    Yes

Technical Documents
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