1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Fuji Electric
  6. 2MBI100HJ-120-50

2MBI100HJ-120-50

Download Datasheet Request Quote

Note : Your request will be directed to Fuji Electric.

2MBI100HJ-120-50 Image

The 2MBI100HJ-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.2 to 4.5 V, DC Collector Current 100 to 200 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for 2MBI100HJ-120-50 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2MBI100HJ-120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.2 to 4.5 V
  • DC Collector Current
    100 to 200 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    655 W
  • Package
    M249
  • Package Type
    Module
  • Applications
    Soft switch application, Industrial machines, welding machines
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products