1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Fuji Electric
  6. 2MBI800XNE120-50

2MBI800XNE120-50

Download Datasheet Request Quote

Note : Your request will be directed to Fuji Electric.

2MBI800XNE120-50 Image

The 2MBI800XNE120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 2.9 V, DC Collector Current 800 A, Peak Collector Current 1600 A, DC Forward Current 800 A. More details for 2MBI800XNE120-50 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2MBI800XNE120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 2.9 V
  • DC Collector Current
    800 A
  • Peak Collector Current
    1600 A
  • DC Forward Current
    800 A
  • Peak Forward Current
    1600 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.3 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    4050 W
  • Package
    M285
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, AC and DC servo drives, Uniterruptible power supply systems, Wind turbines, PV power conditioning, Systems
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products