4MBI600VC-120-50

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4MBI600VC-120-50 Image

The 4MBI600VC-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.35 V, DC Collector Current 600 to 1200 A, DC Forward Current 600 to 1200 A, Junction Temperature 175 Degree C. More details for 4MBI600VC-120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    4MBI600VC-120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Quad Channel IGBT Module

General

  • Types
    Quad Channel IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.35 V
  • DC Collector Current
    600 to 1200 A
  • DC Forward Current
    600 to 1200 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    2460 W
  • Package
    M404
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, Uniterruptible power supply, Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents

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