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4MBI900VB-120RA-50

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4MBI900VB-120RA-50 Image

The 4MBI900VB-120RA-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.45 V, DC Collector Current 900 to 1800 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 1.2 uA. More details for 4MBI900VB-120RA-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    4MBI900VB-120RA-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Quad Channel IGBT Module

General

  • Types
    Quad Channel IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.45 V
  • DC Collector Current
    900 to 1800 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    1.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    3950 W
  • Package
    M404
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, Uniterruptible power supply, Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
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