1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Fuji Electric
  6. 6MBI100XAE120-50

6MBI100XAE120-50

Download Datasheet Request Quote

Note : Your request will be directed to Fuji Electric.

6MBI100XAE120-50 Image

The 6MBI100XAE120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.90 V, DC Collector Current 100 A, Peak Collector Current 200 A, DC Forward Current 100 A. More details for 6MBI100XAE120-50 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    6MBI100XAE120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.90 V
  • DC Collector Current
    100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    100 A
  • Peak Forward Current
    200 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    685 W
  • Package
    M669
  • Package Type
    Module
  • Applications
    Inverter for Moter drive, AC and DC servo drive amplifier, Uniterruptible power supply
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products