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6MBP75VDN120-50

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The 6MBP75VDN120-50 from Fuji Electric is a IGBT with Saturated Collector Emitter Voltage 1.7 to 2.35 V, DC Collector Current 75 to 150 A, Junction Temperature 150 Degree C, Operating Temperature -20 to 110 Degree C, Collector Emitter Voltage 1200 V. More details for 6MBP75VDN120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    6MBP75VDN120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Saturated Collector Emitter Voltage
    1.7 to 2.35 V
  • DC Collector Current
    75 to 150 A
  • Junction Temperature
    150 Degree C
  • Operating Temperature
    -20 to 110 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    462 W
  • Package
    P630
  • Package Type
    Module
  • RoHS Compliant
    Yes
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