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7MBR150XNE120-50

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7MBR150XNE120-50 Image

The 7MBR150XNE120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 2.45 V, DC Collector Current 150 to 300 A, DC Forward Current 150 to 300 A, Junction Temperature 175 Degree C. More details for 7MBR150XNE120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    7MBR150XNE120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, IGBT Module

General

  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 to 2.45 V
  • DC Collector Current
    150 to 300 A
  • DC Forward Current
    150 to 300 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    880 W
  • Package
    M720
  • Package Type
    Module
  • Applications
    Inverter for Moter drive, AC and DC servo drive amplifier, Uniterruptible power supply
  • RoHS Compliant
    Yes

Technical Documents
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