7MBR35VM120-50

IGBT by Fuji Electric (550 more products)

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The 7MBR35VM120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.6 V, DC Collector Current 35 to 70 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.2 uA. More details for 7MBR35VM120-50 can be seen below.

Product Specifications

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Product Details

Part Number
7MBR35VM120-50
Manufacturer
Fuji Electric
Description
1200 V, IGBT Module

General

No. of Transistors

Seven
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.85 to 2.6 V
DC Collector Current

35 to 70 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.2 uA
Collector Emitter Voltage

1200 V
Power Dissipation

210 W
Package

M719
Package Type

Module
Applications

Inverter for Moter drive, AC and DC servo drive amplifier, Uniterruptible power supply
RoHS Compliant

Yes