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7MBR75XME120-50

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7MBR75XME120-50 Image

The 7MBR75XME120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 2.25 V, DC Collector Current 75 to 150 A, DC Forward Current 75 to 150 A, Junction Temperature 175 Degree C. More details for 7MBR75XME120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    7MBR75XME120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, IGBT Module

General

  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 2.25 V
  • DC Collector Current
    75 to 150 A
  • DC Forward Current
    75 to 150 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    455 W
  • Package
    M719
  • Package Type
    Module
  • Applications
    Inverter for Moter drive, AC and DC servo drive amplifier, Uniterruptible power supply
  • RoHS Compliant
    Yes

Technical Documents
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