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FGW50N60VD

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FGW50N60VD Image

The FGW50N60VD from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.6 to 2.05 V, DC Collector Current 50 to 85 A, DC Forward Current 35 to 70 A, Junction Temperature -40 to 175 Degree C. More details for FGW50N60VD can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGW50N60VD
  • Manufacturer
    Fuji Electric
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.05 V
  • DC Collector Current
    50 to 85 A
  • DC Forward Current
    35 to 70 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    200 to 360 W
  • Package
    TO247
  • Package Type
    Through Hole
  • Applications
    Inverter for Moter drives, AC and DC servo drives, Uniterruptible power supply systems
  • RoHS Compliant
    Yes

Technical Documents
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