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FGZ75XS65C

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FGZ75XS65C Image

The FGZ75XS65C from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.7 V, DC Collector Current 75 to 115 A, DC Forward Current 75 to 118 A, Junction Temperature -40 to 175 Degree C. More details for FGZ75XS65C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGZ75XS65C
  • Manufacturer
    Fuji Electric
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.7 V
  • DC Collector Current
    75 to 115 A
  • DC Forward Current
    75 to 118 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    327 to 427 W
  • Package
    TO247
  • Package Type
    Through Hole
  • Applications
    Inverter, Welding matchines, Uniterruptible power supply, PV Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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