Note : Your request will be directed to Hitachi.
The MBN1200H45E2-H from Hitachi is a IGBT with Saturated Collector Emitter Voltage 4.2 V, DC Collector Current 1200 A, Collector Emitter Voltage 4500 V. More details for MBN1200H45E2-H can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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