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AIGB40N65H5

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The AIGB40N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.1 V, DC Collector Current 40 to 74 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for AIGB40N65H5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AIGB40N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.1 V
  • DC Collector Current
    40 to 74 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    125 to 250 W
  • Package
    PG-TO263-3
  • Package Type
    Through Hole
  • Applications
    Off-board charger, On-board charger, DC/Dc converter, Power-factor correction
  • RoHS Compliant
    Yes

Technical Documents
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