1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. AIKB15N65DH5

AIKB15N65DH5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

AIKB15N65DH5 Image

The AIKB15N65DH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.1 V, DC Collector Current 18 to 30 A, DC Forward Current 17 to 32 A, Junction Temperature -40 to 175 Degree C. More details for AIKB15N65DH5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AIKB15N65DH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.1 V
  • DC Collector Current
    18 to 30 A
  • DC Forward Current
    17 to 32 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    52.5 to 105 W
  • Package
    PG-TO263-3
  • Package Type
    Through Hole
  • Applications
    Off-board charger, On-board charger, DC/Dc converter, Power-factor correction
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products