The AIKQ200N75CP2 from Infineon Technologies is an Automotive Qualified IGBT that has a collector-emitter voltage of 750 V. It has a gate-emitter voltage of ±20 V and a saturated collector-emitter voltage of up to 1.5 V. This IGBT has a DC collector current of 200 A and a gate-emitter leakage current of up to 100 nA. It consists of three fast recovery emitter-controlled diodes and offers excellent power density and current sharing during parallel operation. This AEC-Q101 qualified IGBT provides smooth switching characteristics and has a low EMI signature. It is available in a through-hole package and is ideal for xEV inverter, DC-link discharge switch, and automotive aux-drives applications.