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AUIRGS30B60K

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The AUIRGS30B60K from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.95 V, DC Collector Current 50 to 78 A, Junction Temperature -55 to 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for AUIRGS30B60K can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRGS30B60K
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.95 V
  • DC Collector Current
    50 to 78 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    180 to 370 W
  • Package
    D2PAK
  • Package Type
    Surface Mount
  • RoHS Compliant
    Yes

Technical Documents
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