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DF1000R17IE4P

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DF1000R17IE4P Image

The DF1000R17IE4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 295 V, DC Collector Current 1000 A, Peak Collector Current 2000 A, DC Forward Current 1000 A. More details for DF1000R17IE4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    DF1000R17IE4P
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 295 V
  • DC Collector Current
    1000 A
  • Peak Collector Current
    2000 A
  • DC Forward Current
    1000 A
  • Peak Forward Current
    2000 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    0.02 W
  • Package
    AG-PRIME3
  • Package Type
    Chassis Mount
  • Applications
    Chopper Applications, High Power Converters, Traction Drives, Wind Turbines
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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