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DF160R12W2H3F_B11

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DF160R12W2H3F_B11 Image

The DF160R12W2H3F_B11 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 1.75 V, DC Collector Current 40 A, Peak Collector Current 80 A, DC Forward Current 40 A. More details for DF160R12W2H3F_B11 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DF160R12W2H3F_B11
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.75 V
  • DC Collector Current
    40 A
  • Peak Collector Current
    80 A
  • DC Forward Current
    40 A
  • Peak Forward Current
    80 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-EASY2B
  • Package Type
    Chassis Mount
  • Applications
    Solar applications
  • RoHS Compliant
    Yes

Technical Documents
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