F3L600R10W4S7F_C22

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F3L600R10W4S7F_C22 Image

The F3L600R10W4S7F_C22 from Infineon Technologies is a Trench Stop IGBT that is ideal for energy storage systems, solutions for photovoltaic energy, solar and three-level applications. It has a collector-to-emitter voltage of up to 950 V and a saturated collector-to-emitter voltage of 1.63 V. This IGBT has a DC collector current of less than 310 A. It is based on ANPC topology that integrates four fast switches and uses PressFIT technology that enables platform-based design. This IGBT offers a highly reliable packaging and production concept, including an improved hold-down concept that supports power extension. It also includes NTC temperature sensors to sense temperature variations and prevent over-heating related damage. This RoHS-compliant IGBT is available in a module that measures 150 x 62 mm.

Product Specifications

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Product Details

  • Part Number
    F3L600R10W4S7F_C22
  • Manufacturer
    Infineon Technologies
  • Description
    950 V Trench Stop IGBT for Energy Storage & Photovoltaic Applications

General

  • Types
    Field Stop Trench IGBT
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    150 x 62 mm
  • Saturated Collector Emitter Voltage
    1.63 V
  • DC Collector Current
    310 A
  • Peak Collector Current
    600 A
  • Gate Emitter Leakage Current
    100 nA
  • Operating Temperature
    -40 to 125 degree C
  • Collector Emitter Voltage
    950 V
  • Package
    EasyPACK
  • Package Type
    Module
  • Applications
    Energy Storage Systems, Solutions for photovoltaic energy systems
  • RoHS Compliant
    Yes

Technical Documents

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