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F4-50R12KS4_B11

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F4-50R12KS4_B11 Image

The F4-50R12KS4_B11 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.20 to 3.85 V, DC Collector Current 50 A, Peak Collector Current 100 A, DC Forward Current 50 A. More details for F4-50R12KS4_B11 can be seen below.

Product Specifications

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Product Details

  • Part Number
    F4-50R12KS4_B11
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Quad Channel IGBT Module

General

  • Types
    Quad Channel IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.20 to 3.85 V
  • DC Collector Current
    50 A
  • Peak Collector Current
    100 A
  • DC Forward Current
    50 A
  • Peak Forward Current
    100 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    355 W
  • Package
    AG-ECONO2B
  • Package Type
    Chassis Mount
  • Applications
    Inductive Heating and Welding, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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