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FD1000R33HE3-K

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The FD1000R33HE3-K from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.55 to 3.45 V, DC Collector Current 1000 A, Peak Collector Current 2000 A, DC Forward Current 1000 A. More details for FD1000R33HE3-K can be seen below.

Product Specifications

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Product Details

  • Part Number
    FD1000R33HE3-K
  • Manufacturer
    Infineon Technologies
  • Description
    3300 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.55 to 3.45 V
  • DC Collector Current
    1000 A
  • Peak Collector Current
    2000 A
  • DC Forward Current
    1000 A
  • Peak Forward Current
    2000 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    3300 V
  • Package
    AG-IHVB190
  • Package Type
    Chassis Mount
  • Applications
    Chopper applications, Medium voltage converters, Motor drives, Traction drives, UPS systems, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents
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