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FD1400R12IP4D

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FD1400R12IP4D Image

The FD1400R12IP4D from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.10 V, DC Collector Current 1400 A, Peak Collector Current 2800 A, DC Forward Current 1400 A. More details for FD1400R12IP4D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FD1400R12IP4D
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.10 V
  • DC Collector Current
    1400 A
  • Peak Collector Current
    2800 A
  • DC Forward Current
    1400 A
  • Peak Forward Current
    2800 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    7700 W
  • Package
    AG-PRIME3
  • Package Type
    Chassis Mount
  • Applications
    Commercial Agriculture Vehicles
  • RoHS Compliant
    Yes

Technical Documents
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