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FD150R12RT4

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FD150R12RT4 Image

The FD150R12RT4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 150 A, Peak Collector Current 300 A, DC Forward Current 150 A. More details for FD150R12RT4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FD150R12RT4
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    150 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    150 A
  • Peak Forward Current
    300 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    790 W
  • Package
    AG-34MM
  • Package Type
    Chassis Mount
  • Applications
    High Frequency Switching Application, Moter Drives, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents
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