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FD200R12KE3P

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The FD200R12KE3P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FD200R12KE3P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FD200R12KE3P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • Applications
    Chopper applications, DC/DC converter, Motor drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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