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FD450R12KE4P

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The FD450R12KE4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.15 V, DC Collector Current 450 A, Peak Collector Current 900 A, DC Forward Current 450 A. More details for FD450R12KE4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FD450R12KE4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.15 V
  • DC Collector Current
    450 A
  • Peak Collector Current
    900 A
  • DC Forward Current
    450 A
  • Peak Forward Current
    900 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • Applications
    3-Level-Applications, Chopper applications, Moter Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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