1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FD900R12IP4D

FD900R12IP4D

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FD900R12IP4D Image

The FD900R12IP4D from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.10 V, DC Collector Current 900 A, Peak Collector Current 1800 A, DC Forward Current 900 A. More details for FD900R12IP4D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FD900R12IP4D
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.10 V
  • DC Collector Current
    900 A
  • Peak Collector Current
    1800 A
  • DC Forward Current
    900 A
  • Peak Forward Current
    1800 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-PRIME2
  • Package Type
    Chassis Mount
  • Applications
    Chopper applications
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products