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FF150R12KS4_B2

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FF150R12KS4_B2 Image

The FF150R12KS4_B2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.20 to 3.85 V, DC Collector Current 150 A, Peak Collector Current 300 A, DC Forward Current 150 A. More details for FF150R12KS4_B2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF150R12KS4_B2
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.20 to 3.85 V
  • DC Collector Current
    150 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    150 A
  • Peak Forward Current
    300 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1250 W
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • Applications
    High Frequency Switching Application, Medical Applications, Motor Drives, Resonant Inverter Appliccations, Servo Drives, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents
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