1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FF200R12KS4P

FF200R12KS4P

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FF200R12KS4P Image

The FF200R12KS4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.20 to 3.85 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FF200R12KS4P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FF200R12KS4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.20 to 3.85 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • Applications
    High Frequency Switching Application, Medical Applications, Motor Drives, Resonant Inverter Appliccations, Servo Drives, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products