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FF200R12KT3_E

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FF200R12KT3_E Image

The FF200R12KT3_E from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FF200R12KT3_E can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF200R12KT3_E
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1050 W
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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