1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FF200R17KE3

FF200R17KE3

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FF200R17KE3 Image

The FF200R17KE3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.45 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FF200R17KE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FF200R17KE3
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.45 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    1250 W
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products