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FF225R12MS4

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FF225R12MS4 Image

The FF225R12MS4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.20 to 3.85 V, DC Collector Current 225 A, Peak Collector Current 450 A, DC Forward Current 225 A. More details for FF225R12MS4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF225R12MS4
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.20 to 3.85 V
  • DC Collector Current
    225 A
  • Peak Collector Current
    450 A
  • DC Forward Current
    225 A
  • Peak Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1450 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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