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FF225R65T3E3

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FF225R65T3E3 Image

The FF225R65T3E3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 to 4.20 V, DC Collector Current 225 A, Peak Collector Current 450 A, DC Forward Current 225 A. More details for FF225R65T3E3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF225R65T3E3
  • Manufacturer
    Infineon Technologies
  • Description
    6500 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3 to 4.20 V
  • DC Collector Current
    225 A
  • Peak Collector Current
    450 A
  • DC Forward Current
    225 A
  • Peak Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    6500 V
  • Power Dissipation
    1000000 W
  • Package
    AG-XHP3K65
  • Package Type
    Chassis Mount
  • Applications
    Medium voltage converters, Traction drives
  • RoHS Compliant
    Yes

Technical Documents
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