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FF450R17ME4P

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FF450R17ME4P Image

The FF450R17ME4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.45 V, DC Collector Current 450 A, Peak Collector Current 900 A, DC Forward Current 450 A. More details for FF450R17ME4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF450R17ME4P
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.45 V
  • DC Collector Current
    450 A
  • Peak Collector Current
    900 A
  • DC Forward Current
    450 A
  • Peak Forward Current
    900 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount
  • Applications
    Moter drives, UPS systems, Servo Drives, Wind Turbines
  • RoHS Compliant
    Yes

Technical Documents
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