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FF600R12IE4V

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FF600R12IE4V Image

The FF600R12IE4V from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.10 V, DC Collector Current 600 A, Peak Collector Current 1200 A, DC Forward Current 600 A. More details for FF600R12IE4V can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF600R12IE4V
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.10 V
  • DC Collector Current
    600 A
  • Peak Collector Current
    1200 A
  • DC Forward Current
    600 A
  • Peak Forward Current
    1200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    3350 W
  • Package
    AG-PRIME2
  • Package Type
    Chassis Mount
  • Applications
    Hybrid Electrical Vehicles (H)EV
  • RoHS Compliant
    Yes

Technical Documents
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