1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FF600R12ME4C

FF600R12ME4C

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FF600R12ME4C Image

The FF600R12ME4C from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.10 V, DC Collector Current 600 A, Peak Collector Current 1200 A, DC Forward Current 600 A. More details for FF600R12ME4C can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FF600R12ME4C
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.10 V
  • DC Collector Current
    600 A
  • Peak Collector Current
    1200 A
  • DC Forward Current
    600 A
  • Peak Forward Current
    1200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    4050 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount
  • Applications
    High Power Converters, Moter drives, UPS systems, Servo Drives, Wind Turbines
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products