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FF600R12ME4P

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FF600R12ME4P Image

The FF600R12ME4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.10 V, DC Collector Current 600 A, Peak Collector Current 1200 A, DC Forward Current 600 A. More details for FF600R12ME4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF600R12ME4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.10 V
  • DC Collector Current
    600 A
  • Peak Collector Current
    1200 A
  • DC Forward Current
    600 A
  • Peak Forward Current
    1200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount
  • Applications
    High Power Converters, Moter drives, UPS systems, Servo Drives, Wind Turbines
  • RoHS Compliant
    Yes

Technical Documents
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